SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve avalanche resistance after reducing ON resistance in a semiconductor device such as a power MOSFET with a trench gate structure. SOLUTION: A power MOSFET 21 has an n-type drift layer 10 and a p-type base layer 11 laminated and formed thereon. A trench gate 17 is form...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMAGUCHI YOSHIHIRO, ONO SHOTARO, MATSUKI HIROFUMI, KAWAGUCHI YUSUKE, ARAI KIYOTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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