SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve avalanche resistance after reducing ON resistance in a semiconductor device such as a power MOSFET with a trench gate structure. SOLUTION: A power MOSFET 21 has an n-type drift layer 10 and a p-type base layer 11 laminated and formed thereon. A trench gate 17 is form...

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Bibliographische Detailangaben
Hauptverfasser: YAMAGUCHI YOSHIHIRO, ONO SHOTARO, MATSUKI HIROFUMI, KAWAGUCHI YUSUKE, ARAI KIYOTAKA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve avalanche resistance after reducing ON resistance in a semiconductor device such as a power MOSFET with a trench gate structure. SOLUTION: A power MOSFET 21 has an n-type drift layer 10 and a p-type base layer 11 laminated and formed thereon. A trench gate 17 is formed to get at the n-type drift layer 10 passing through the p-type base layer 11. An n+-type source region 18 and a p+-type region 19 are formed on the p-type base layer 11. They are adjacently disposed alternately along a longitudinal direction of the trench gate 17. The n+-type source region 18 and the p+-type region 19 are disposed to intersect with each other having an inclination to the longitudinal direction of the trench gate 17. COPYRIGHT: (C)2006,JPO&NCIPI