FERROELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME AND FERROELECTRIC MEMORY
PROBLEM TO BE SOLVED: To provide a ferroelectric material containing no lead and showing residual dielectric polarization nearly equal to that of PZT and a method of manufacturing the same. SOLUTION: A precursor solution of BiFeO3is applied on the surface of a base member. After the application, a h...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a ferroelectric material containing no lead and showing residual dielectric polarization nearly equal to that of PZT and a method of manufacturing the same. SOLUTION: A precursor solution of BiFeO3is applied on the surface of a base member. After the application, a heat treatment is carried out to obtain a dielectric film. The dielectric film is heated under a non-oxidizing atmosphere to be crystallized. As a result, the ferroelectric material containing Bi, Fe and O as structural elements and having a tetragonal or orthorhombic crystal lattice is obtained. COPYRIGHT: (C)2006,JPO&NCIPI |
---|