FERROELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME AND FERROELECTRIC MEMORY

PROBLEM TO BE SOLVED: To provide a ferroelectric material containing no lead and showing residual dielectric polarization nearly equal to that of PZT and a method of manufacturing the same. SOLUTION: A precursor solution of BiFeO3is applied on the surface of a base member. After the application, a h...

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Hauptverfasser: UCHIDA HIROSHI, KODA SEIICHIRO, NAKAGI HIROSHI, FUNAKUBO HIROSHI, KONDO MASAO, UENO RISAKO, MARUYAMA KENJI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a ferroelectric material containing no lead and showing residual dielectric polarization nearly equal to that of PZT and a method of manufacturing the same. SOLUTION: A precursor solution of BiFeO3is applied on the surface of a base member. After the application, a heat treatment is carried out to obtain a dielectric film. The dielectric film is heated under a non-oxidizing atmosphere to be crystallized. As a result, the ferroelectric material containing Bi, Fe and O as structural elements and having a tetragonal or orthorhombic crystal lattice is obtained. COPYRIGHT: (C)2006,JPO&NCIPI