NON-ABRASIVE PARTICLE CHEMICAL MECHANICAL POLISHING COMPOSITION, AND METHOD RELATED THERETO

PROBLEM TO BE SOLVED: To provide a polishing composition capable of reducing dishing of metals in a trench or trough, without prolonging the polishing working time and avoiding generation of wiring metal residues, when semiconductor wafer with patterns made of nonferrous metal is polished. SOLUTION:...

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Bibliographische Detailangaben
Hauptverfasser:	SOLOMON ROBERT D, GHOSH TIRTHANKAR, WANG HONGYU
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing composition capable of reducing dishing of metals in a trench or trough, without prolonging the polishing working time and avoiding generation of wiring metal residues, when semiconductor wafer with patterns made of nonferrous metal is polished. SOLUTION: This composition comprises an oxidant, a nonferous inhibitor, 0 to 15 weight% of water-soluble reformed cellulose, 0 to 15 weight% of phosphorous compound, 0.005 to 5 weight% of amphiphilic polymer with an ion hydrophilic part of 2 to 250 carbon numbers, and water. A copolymer, formed of an alkyl mercaptan, having an average molecular weight of 50 to 5000, is particularly preferable as the amphiphilic polymer. COPYRIGHT: (C)2006,JPO&NCIPI