THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY, LAMINATED STORAGE CAPACITOR, AND METHOD OF FABRICATING THE SAME

THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY, LAMINATED STORAGE CAPACITOR, AND METHOD OF FABRICATING THE SAME

PROBLEM TO BE SOLVED: To provide one laminated storage capacitor structure and a method of fabricating the same. SOLUTION: Provided is the laminated storage capacitor structure of each pixel used for a TFT-LCD. A 1st storage capacitor comprises a 1st metal layer, a gate insulating layer, and a 2nd m...

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Bibliographische Detailangaben
Hauptverfasser: LUO FANGN, LO CHANGNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide one laminated storage capacitor structure and a method of fabricating the same. SOLUTION: Provided is the laminated storage capacitor structure of each pixel used for a TFT-LCD. A 1st storage capacitor comprises a 1st metal layer, a gate insulating layer, and a 2nd metal layer. A 2nd storage capacitor comprises a 2nd metal layer, a protective insulating layer, and an indium tin oxide layer. The 1st metal layer and indium tin oxide layer are connected to each other through a via hole. The via hole is formed by etching the gate insulating layer and protective insulating layer in an etching step of one insulating layer. The indium tin oxide layer and a pixel electrode layer are deposited at different positions on the protective insulating layer. COPYRIGHT: (C)2006,JPO&NCIPI