SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a resistance of a pillar layer. SOLUTION: The semiconductor device includes: a first-conductivity type semiconductor substrate 1; a pillar structure section formed on the first-conductivity type semiconductor substrate, the pillar structure section being formed of five semiconductor pillar layers arranged in one direction parallel to a major surface of the first-conductivity type semiconductor substrate; and isolation insulating sections 12 formed on the first-conductivity type semiconductor substrate sandwiching the pillar structure section therebetween; wherein the pillar structure section is formed of: a first first-conductivity type pillar layer 2; a second first-conductivity type pillar layer 5 and a third first-conductivity type pillar layer 6 arranged to have the first first-conductivity type pillar layer interposed therebetween; a first second-conductivity type pillar layer 3 provided between the first first-conductivity type pillar layer and the second first-conductivity type pillar layer; and a second second-conductivity type pillar layer 4 provided between the first first-conductivity type pillar layer and the third first-conductivity type pillar layer. COPYRIGHT: (C)2006,JPO&NCIPI