SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a Zn diffusion region 7, having a Zn concentration of 5E18/cm3or lower inside an AlxGa1-xAs (0

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Bibliographische Detailangaben
Hauptverfasser:	OZAWA YASUHIKO, YATANI MITSUYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a Zn diffusion region 7, having a Zn concentration of 5E18/cm3or lower inside an AlxGa1-xAs (0