VAPOR DEPOSITION SOURCE AND VAPOR DEPOSITION SYSTEM PROVIDED THEREWITH

PROBLEM TO BE SOLVED: To provide a vapor deposition source having a fixed vapor deposition rate and having satisfactory reproducibility, and to provide a vapor deposition system provided therewith. SOLUTION: The vapor deposition source is provided with: heating vessels 13, 23 each having an opening;...

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Bibliographische Detailangaben
Hauptverfasser:	KYO MEISHU, SO KANSHO, TEI SHAKUKEN, KIM DOKON, AN SAIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a vapor deposition source having a fixed vapor deposition rate and having satisfactory reproducibility, and to provide a vapor deposition system provided therewith. SOLUTION: The vapor deposition source is provided with: heating vessels 13, 23 each having an opening; and covers 15, 25 coupled to each opening of the heating vessels 13, 23, and in which a plurality of holes 17, 27 are formed along the longitudinal direction of each opening of the heating vessels 13, 23, and along the longitudinal direction of each opening part in the heating vessels 13, 23, the distance between the mutually adjacent holes 17, 27 formed at the covers 15, 25 changes. COPYRIGHT: (C)2006,JPO&NCIPI