NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device whose circuit area can be reduced. SOLUTION: The nonvolatile semiconductor memory device is provided with a cell array 101 wherein a plurality of memory cells are disposed in a matrix shape, a plurality of bit lines BL1 to BL(m+1) running in a row direction of the matrix, a sense amplifier 103 amplifying data read out from the memory cells via the bit lines BL1 to BL(m+1), a shield power source 107 supplying potential for performing shield between odd-numbered bit lines BL1 to BLm and between even-numbered bit lines BL2 to BL(m+1) and a bit line selecting circuit 102 conducting the even-numbered bit lines BL2 to BL(m+1) to the shield power source 107 when the odd-numbered bit lines BL1 to BLm are conducted to the sense amplifier 103 and conducting the odd-numbered bit lines BL1 to BLm to the shield power source 107 when the even-numbered bit lines BL2 to BL(m+1) are conducted to the sense amplifier 103. COPYRIGHT: (C)2006,JPO&NCIPI