METHOD FOR CORRECTING MASK PATTERN CIRCUIT AND MASK CORRECTION SYSTEM
PROBLEM TO BE SOLVED: To easily and rapidly correct a circuit on a mask pattern. SOLUTION: The method for correcting a mask pattern circuit to correct a mask pattern circuit is carried out by forming a predetermined thin film by using a focused ion beam and a film forming gas on an aperture pattern...
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| creator | YAMAMOTO JIRO IRIKITA NOBUYUKI |
| description | PROBLEM TO BE SOLVED: To easily and rapidly correct a circuit on a mask pattern. SOLUTION: The method for correcting a mask pattern circuit to correct a mask pattern circuit is carried out by forming a predetermined thin film by using a focused ion beam and a film forming gas on an aperture pattern circuit formed on a mask to shut the aperture pattern circuit. Then, a mask material at a desired position on the mask is etched by using a focused ion beam and an etching gas to form a predetermined aperture pattern circuit on the mask. COPYRIGHT: (C)2006,JPO&NCIPI |
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SOLUTION: The method for correcting a mask pattern circuit to correct a mask pattern circuit is carried out by forming a predetermined thin film by using a focused ion beam and a film forming gas on an aperture pattern circuit formed on a mask to shut the aperture pattern circuit. Then, a mask material at a desired position on the mask is etched by using a focused ion beam and an etching gas to form a predetermined aperture pattern circuit on the mask. 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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | METHOD FOR CORRECTING MASK PATTERN CIRCUIT AND MASK CORRECTION SYSTEM |
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