METHOD FOR CORRECTING MASK PATTERN CIRCUIT AND MASK CORRECTION SYSTEM

PROBLEM TO BE SOLVED: To easily and rapidly correct a circuit on a mask pattern. SOLUTION: The method for correcting a mask pattern circuit to correct a mask pattern circuit is carried out by forming a predetermined thin film by using a focused ion beam and a film forming gas on an aperture pattern...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	YAMAMOTO JIRO, IRIKITA NOBUYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To easily and rapidly correct a circuit on a mask pattern. SOLUTION: The method for correcting a mask pattern circuit to correct a mask pattern circuit is carried out by forming a predetermined thin film by using a focused ion beam and a film forming gas on an aperture pattern circuit formed on a mask to shut the aperture pattern circuit. Then, a mask material at a desired position on the mask is etched by using a focused ion beam and an etching gas to form a predetermined aperture pattern circuit on the mask. COPYRIGHT: (C)2006,JPO&NCIPI