LUMINOUS UNIT THAT USES MULTILAYER COMPOUND METALLIC COATING LAYER AS FLIP CHIP ELECTRODE

PROBLEM TO BE SOLVED: To provide a luminous unit that uses a multilayer compound metallic coating layer with high luminous efficiency that is equipped with current dispersion and high-reflectance facilities. SOLUTION: A chip structure 40 is equipped with a single layer Group III nitride-based compou...

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Bibliographische Detailangaben
Hauptverfasser: CHANG PAN-TZU, O SHOKIN, HUANG WENIEH, LU CHI-WEI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a luminous unit that uses a multilayer compound metallic coating layer with high luminous efficiency that is equipped with current dispersion and high-reflectance facilities. SOLUTION: A chip structure 40 is equipped with a single layer Group III nitride-based compound semiconductor chip structure 40 and packaging submount 60. The single layer Group III nitride compound semiconductor chip structure 40 comprises a translucent substrate 30, primary configuration semiconductor layer 41 combined with the translucent substrate 30 and formed on the surface of the translucent substrate 30, primary electrode 42 formed on the partial surface of the primary configuration semiconductor layer 41, prime mover layer 43 formed on the surface of the primary configuration semiconductor layer 41 for the purpose of avoiding the coverage of the primary electrode 42, secondary configuration semiconductor layer 44 formed on the surface of the prime mover layer 43, and secondary electrode 45 formed on the surface of the secondary configuration layer 44. Meanwhile, the packaging submount 60 comprises at least two conductive trace lines 61 that cope with the primary electrode 42 and secondary electrode 45 separately. The chip structure 40 is combined with the packaging submount 60 through an interlayer by a reversing flip chip method. COPYRIGHT: (C)2006,JPO&NCIPI