SLURRY MATERIAL AND POLISHING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To preclude film separation from a wafer edge and the generation of particles. SOLUTION: A step of forming a nitride film on a substrate, and a step of depositing an insulating film and a metal film on the nitride film to form a wiring structure are performed. Subsequently, the...

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Bibliographische Detailangaben
Hauptverfasser:	KOBORI ETSUYOSHI, KOROGI HAYATO
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To preclude film separation from a wafer edge and the generation of particles. SOLUTION: A step of forming a nitride film on a substrate, and a step of depositing an insulating film and a metal film on the nitride film to form a wiring structure are performed. Subsequently, the end of the substrate is polished and when the nitride film is exposed at the end of the substrate, the polishing is terminated. As a result, at a time when the nitride film having adherence to a wafer is exposed, the end of the wafer, namely, a bevel can be stopped in polishing. Accordingly, it is possible to restrict the film separation from the bevel, and reduce the generation of particles. COPYRIGHT: (C)2006,JPO&NCIPI