METHOD FOR REFINING TRIMETHYLSILANE

PROBLEM TO BE SOLVED: To provide a method for refining trimethylsilanes useful as a film-forming material in the production of semiconductors. SOLUTION: This method comprises adsorbing and removing silanes, methylsilanes and dimethylsilanes in trimethylsilanes by using an active carbon in which at l...

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Bibliographische Detailangaben
Hauptverfasser: SHIBAYAMA SHIGERO, OHASHI MITSUYA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for refining trimethylsilanes useful as a film-forming material in the production of semiconductors. SOLUTION: This method comprises adsorbing and removing silanes, methylsilanes and dimethylsilanes in trimethylsilanes by using an active carbon in which at least copper oxide (II) and zinc oxide are mixed and solidified. COPYRIGHT: (C)2006,JPO&NCIPI