DEPOSITION METHOD OF GRADING PRXCA1-XMNO3 THIN FILMS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION METHOD

PROBLEM TO BE SOLVED: To provide a deposition method of grading PCMO thin films capable of manufacturing memory resistive elements in various constitutions through a film thickness for the appropriate operation of a memory device. SOLUTION: Since Ca, Mn and Pr contained in a PCMO film have great inf...

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Hauptverfasser:	LI TINGKAI, LAWRENCE J CHARNESKI, ZHUANG WEI-WEI, HSU SHENG TENG, EVANS DAVID R
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a deposition method of grading PCMO thin films capable of manufacturing memory resistive elements in various constitutions through a film thickness for the appropriate operation of a memory device. SOLUTION: Since Ca, Mn and Pr contained in a PCMO film have great influence on its switching characteristic, the precursors of Pr, Ca and Mn having the action of different deposition rates are selected concerning deposition parameters such as a deposition temperature and a vaporization temperature as a method of realizing a grading PCMO thin film for use in a RRAM memory device. Consequently, the individual deposition parameters during a deposition process are changed so as to deposit grading PCMO thin films with the inclined distribution of Pr, Ca or Mn. COPYRIGHT: (C)2006,JPO&NCIPI