METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To prevent the generation of cracks and to enhance the productivity by stabilizing the temperature of a single crystal by stabilizing the flow of a gas around the crystal in the production of the single crystal. SOLUTION: An apparatus 1 for producing the single crystal is constituted of: a refractory 5 provided in a furnace body 3 and having an opening part 11 at an upper part; a crucible 13 which is provided in the refractory 5 and in which a raw material 19 is charged; a heating means 15 which is installed at the outside of the refractory 5 and heats the raw material 19 to melt it; and a pulling means 21 for bringing the lower end of a seed crystal 23 into contact with a melt of the raw material 19 and pulling the seed crystal 23, wherein a gas-flow generating means 25 for allowing a gas to flow into the inside from the outside of the refractory 5 and allowing the gas to flow from the inside to the outside in one direction in the refractory 5 is provided so as to suppress the inflow of a low temperature gas to the circumference of a crystal 29 grown by the seed crystal 23 from the opening part 11 formed at the upper part of the refractory 5. COPYRIGHT: (C)2006,JPO&NCIPI