SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a new radiation structure for a semiconductor device using flip chip bonding and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device is provided with a connection terminal consisting of a flat wire 6 consisting of an electrolytic plating layer connected with a metal bump 5, a bed part 1 having radiation structure connected to the second main surface of a semiconductor element 2, and a resin shielding object 4 for shielding the semiconductor element and a metallic bump. Respectively one surface of the electrolytic plating layer and the bed part are exposed from the resin shielding object. The electrolytic plating layer is a conduction pattern of an electroformed board. The semiconductor device is small and can release heat generated from the semiconductor element efficiently. With the conduction pattern of the electroformed board as the electrolytic layer, the semiconductor device is manufacture simply. COPYRIGHT: (C)2006,JPO&NCIPI