METHOD FOR MEASURING ELECTRIC PHYSICAL PROPERTIES OF MINUTE AREA OF SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a method for measuring electric physical properties of the minute area of a semiconductor element by which measurement by EBIC method and SEM observation can be surely conducted for the minute area of a semiconductor element even under the objective lens of an SEM. S...

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Hauptverfasser: WARATANI SHUZO, SANO YUJI
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creator WARATANI SHUZO
SANO YUJI
description PROBLEM TO BE SOLVED: To provide a method for measuring electric physical properties of the minute area of a semiconductor element by which measurement by EBIC method and SEM observation can be surely conducted for the minute area of a semiconductor element even under the objective lens of an SEM. SOLUTION: A minute metal electrode film for measurement is formed on the surface of semiconductor adjacent to its pn joint, and the electrode film is joined with a lead wire. A light is emitted to a minute area including the electrode film and the lead wire of the semiconductor element under a microscope, so as to generate a carrier. An electric signal generated by the carrier is output through the lead wire, and it is converted into a picture to measure the electric physical properties of the minute area of the semiconductor element. COPYRIGHT: (C)2006,JPO&NCIPI
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2006093257A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2006093257A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2006093257A3</originalsourceid><addsrcrecordid>eNqNjL0KwjAURrM4iPoOF3chtKh0DOmNiTQ_JDdDp1IkTqKF-v5YwQdw-jhwzrdmvUXSvgXlI1gUKUfjLoAdSopGQtB9MlJ0EKIPGMlgAq_AGpcJQUQUX0xojfSuzZKWmyW26GjLVvfxMZfdbzdsr5CkPpTpNZR5Gm_lWd7DNVScn3hTV8ezqP-SPpccMh4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MEASURING ELECTRIC PHYSICAL PROPERTIES OF MINUTE AREA OF SEMICONDUCTOR ELEMENT</title><source>esp@cenet</source><creator>WARATANI SHUZO ; SANO YUJI</creator><creatorcontrib>WARATANI SHUZO ; SANO YUJI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for measuring electric physical properties of the minute area of a semiconductor element by which measurement by EBIC method and SEM observation can be surely conducted for the minute area of a semiconductor element even under the objective lens of an SEM. SOLUTION: A minute metal electrode film for measurement is formed on the surface of semiconductor adjacent to its pn joint, and the electrode film is joined with a lead wire. A light is emitted to a minute area including the electrode film and the lead wire of the semiconductor element under a microscope, so as to generate a carrier. An electric signal generated by the carrier is output through the lead wire, and it is converted into a picture to measure the electric physical properties of the minute area of the semiconductor element. COPYRIGHT: (C)2006,JPO&amp;NCIPI</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060406&amp;DB=EPODOC&amp;CC=JP&amp;NR=2006093257A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060406&amp;DB=EPODOC&amp;CC=JP&amp;NR=2006093257A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WARATANI SHUZO</creatorcontrib><creatorcontrib>SANO YUJI</creatorcontrib><title>METHOD FOR MEASURING ELECTRIC PHYSICAL PROPERTIES OF MINUTE AREA OF SEMICONDUCTOR ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a method for measuring electric physical properties of the minute area of a semiconductor element by which measurement by EBIC method and SEM observation can be surely conducted for the minute area of a semiconductor element even under the objective lens of an SEM. SOLUTION: A minute metal electrode film for measurement is formed on the surface of semiconductor adjacent to its pn joint, and the electrode film is joined with a lead wire. A light is emitted to a minute area including the electrode film and the lead wire of the semiconductor element under a microscope, so as to generate a carrier. An electric signal generated by the carrier is output through the lead wire, and it is converted into a picture to measure the electric physical properties of the minute area of the semiconductor element. COPYRIGHT: (C)2006,JPO&amp;NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL0KwjAURrM4iPoOF3chtKh0DOmNiTQ_JDdDp1IkTqKF-v5YwQdw-jhwzrdmvUXSvgXlI1gUKUfjLoAdSopGQtB9MlJ0EKIPGMlgAq_AGpcJQUQUX0xojfSuzZKWmyW26GjLVvfxMZfdbzdsr5CkPpTpNZR5Gm_lWd7DNVScn3hTV8ezqP-SPpccMh4</recordid><startdate>20060406</startdate><enddate>20060406</enddate><creator>WARATANI SHUZO</creator><creator>SANO YUJI</creator><scope>EVB</scope></search><sort><creationdate>20060406</creationdate><title>METHOD FOR MEASURING ELECTRIC PHYSICAL PROPERTIES OF MINUTE AREA OF SEMICONDUCTOR ELEMENT</title><author>WARATANI SHUZO ; SANO YUJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006093257A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>WARATANI SHUZO</creatorcontrib><creatorcontrib>SANO YUJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WARATANI SHUZO</au><au>SANO YUJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MEASURING ELECTRIC PHYSICAL PROPERTIES OF MINUTE AREA OF SEMICONDUCTOR ELEMENT</title><date>2006-04-06</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for measuring electric physical properties of the minute area of a semiconductor element by which measurement by EBIC method and SEM observation can be surely conducted for the minute area of a semiconductor element even under the objective lens of an SEM. SOLUTION: A minute metal electrode film for measurement is formed on the surface of semiconductor adjacent to its pn joint, and the electrode film is joined with a lead wire. A light is emitted to a minute area including the electrode film and the lead wire of the semiconductor element under a microscope, so as to generate a carrier. An electric signal generated by the carrier is output through the lead wire, and it is converted into a picture to measure the electric physical properties of the minute area of the semiconductor element. COPYRIGHT: (C)2006,JPO&amp;NCIPI</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title METHOD FOR MEASURING ELECTRIC PHYSICAL PROPERTIES OF MINUTE AREA OF SEMICONDUCTOR ELEMENT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T01%3A46%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WARATANI%20SHUZO&rft.date=2006-04-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2006093257A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true