METHOD FOR MEASURING ELECTRIC PHYSICAL PROPERTIES OF MINUTE AREA OF SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a method for measuring electric physical properties of the minute area of a semiconductor element by which measurement by EBIC method and SEM observation can be surely conducted for the minute area of a semiconductor element even under the objective lens of an SEM. SOLUTION: A minute metal electrode film for measurement is formed on the surface of semiconductor adjacent to its pn joint, and the electrode film is joined with a lead wire. A light is emitted to a minute area including the electrode film and the lead wire of the semiconductor element under a microscope, so as to generate a carrier. An electric signal generated by the carrier is output through the lead wire, and it is converted into a picture to measure the electric physical properties of the minute area of the semiconductor element. COPYRIGHT: (C)2006,JPO&NCIPI