SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To prevent the disconnection of a via hole by preventing the peeling of an electroless-plated layer and an electroplated layer from their boundary. SOLUTION: A semiconductor device is provided with a semiconductor substrate 11, electrodes 13 formed on the substrate 11, and a vi...

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Bibliographische Detailangaben
Hauptverfasser: MIURA TAKESHI, IMATO MINEYOSHI, NISHIMURA YOSHIAKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To prevent the disconnection of a via hole by preventing the peeling of an electroless-plated layer and an electroplated layer from their boundary. SOLUTION: A semiconductor device is provided with a semiconductor substrate 11, electrodes 13 formed on the substrate 11, and a via hole 15 which conducts the electrodes 13 and the bottom surface of the substrate 11. The device is also provided with an insulating film 21 formed on the substrate 11 to cover the electrodes 13 and via hole 15. The via hole 15 is provided with the electroless-plated layer 16 and the electroplated layer 18 formed on the surface of the layer 16. The layers 16 and 18 are extended to the upper parts of the electrodes 13. COPYRIGHT: (C)2006,JPO&NCIPI