METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing an SiC single crystal, by which the single crystal having a desired diameter can be obtained. SOLUTION: When the SiC single crystal 14 is grown from an SiC seed crystal 13, the diameter of the SiC single crystal is measured...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FUTATSUYAMA KOKI, KITO YASUO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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