METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing an SiC single crystal, by which the single crystal having a desired diameter can be obtained. SOLUTION: When the SiC single crystal 14 is grown from an SiC seed crystal 13, the diameter of the SiC single crystal is measured...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	FUTATSUYAMA KOKI, KITO YASUO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing an SiC single crystal, by which the single crystal having a desired diameter can be obtained. SOLUTION: When the SiC single crystal 14 is grown from an SiC seed crystal 13, the diameter of the SiC single crystal is measured by using an X-ray generator 21 and an image tube 22, and then the diameter of the SiC single crystal is allowed to match with an arbitrarily set value on the basis of the measured diameter by changing the insertion amount of a crystal 14 into a guide member 6a by a vertical movement device 17. COPYRIGHT: (C)2006,JPO&NCIPI