CLEANING LIQUID AND CLEANING METHOD

PROBLEM TO BE SOLVED: To provide a cleaning liquid capable of removing an etching residue remaining after dry etching, in a short time, in a wiring process of a semiconductor element used for a semiconductor integrated circuit, without causing oxidation nor corrosion of a copper wiring material, an...

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Bibliographische Detailangaben
Hauptverfasser:	OTO HIDE, SHIMADA KENJI, MATSUNAGA HIROTSUGU, ABE KOJIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM METALLURGY RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a cleaning liquid capable of removing an etching residue remaining after dry etching, in a short time, in a wiring process of a semiconductor element used for a semiconductor integrated circuit, without causing oxidation nor corrosion of a copper wiring material, an insulating film material, etc., and to provide a cleaning method using the same. SOLUTION: This cleaning liquid comprises an aqueous solution which is formed by together mixing nitric acid, sulfuric acid, a fluorine compound, and a basic compound, wherein a water concentration of the liquid is not less than 80 wt% and a pH thereof is controlled to be not less than 1 and less than 3. COPYRIGHT: (C)2006,JPO&NCIPI