CVD TREATING METHOD

PROBLEM TO BE SOLVED: To improve the utilization rates of a semiconductor manufacturing apparatus, in which a burden of cleaning is remarkably alleviated by preventing the formation of a solid film on a wall surface of a flow passage. SOLUTION: The apparatus comprises a fixed part such as a valve bo...

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Bibliographische Detailangaben
Hauptverfasser:	TOMEZUKA KOJI, FURUICHI MASAYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve the utilization rates of a semiconductor manufacturing apparatus, in which a burden of cleaning is remarkably alleviated by preventing the formation of a solid film on a wall surface of a flow passage. SOLUTION: The apparatus comprises a fixed part such as a valve box having a gas flow passage, in which exhaust gas is discharged with CVD treating in a reaction chamber, and a movable part such as a valve body that opens and closes the gas flow passage. When the gas passes inside the gas flow passage of a valve device, in which a heater for the fixed part is fixed to the fixed part, the heater for the fixed part heats the fixed part. COPYRIGHT: (C)2006,JPO&NCIPI