NON-ACTIVATED GUARD RING FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide semiconductor devices, and particularly, semiconductor devices which incorporate a metal-semiconductor rectifying junction, such as Schottky diodes. SOLUTION: A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer, without completely annealing the semiconductor contact layer, for forming a high resistance region. The guard ring can be located at the edge of the layer or, alternatively at a distance away from the edge of the layer. A Schottky metal contact is formed on the layer, and the edges of the Schottky contact are disposed on the guard ring. COPYRIGHT: (C)2006,JPO&NCIPI