HIGH DIELECTRIC CAPACITOR AND SEMICONDUCTOR DEVICE

HIGH DIELECTRIC CAPACITOR AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To increase capacity in a high dielectric capacitor in which the capacitor insulating film is Ta2O5. SOLUTION: After a Ta2O5film has been deposited on (002) the surface of Ru and low-temperature oxidation is performed, rapid nitriding process is performed at about 800°C. COPYRI...

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Bibliographische Detailangaben
Hauptverfasser: HAYASHI GUN, NAKABAYASHI MASAAKI
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Zusammenfassung:PROBLEM TO BE SOLVED: To increase capacity in a high dielectric capacitor in which the capacitor insulating film is Ta2O5. SOLUTION: After a Ta2O5film has been deposited on (002) the surface of Ru and low-temperature oxidation is performed, rapid nitriding process is performed at about 800°C. COPYRIGHT: (C)2006,JPO&NCIPI