MAGNETORESISTIVE MEMORY AND MAGNETORESISTIVE MEMORY WRITING METHOD

PROBLEM TO BE SOLVED: To provide a magnetoresistive memory which can reduce power consumption and a magnetoresistive memory writing method. SOLUTION: When writing data in a memory cell array 110, a comparator circuit 150 compares the data stored in a word line in which data is written with the writi...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	ISE MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!