MAGNETORESISTIVE MEMORY AND MAGNETORESISTIVE MEMORY WRITING METHOD

MAGNETORESISTIVE MEMORY AND MAGNETORESISTIVE MEMORY WRITING METHOD

PROBLEM TO BE SOLVED: To provide a magnetoresistive memory which can reduce power consumption and a magnetoresistive memory writing method. SOLUTION: When writing data in a memory cell array 110, a comparator circuit 150 compares the data stored in a word line in which data is written with the writi...

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1. Verfasser: ISE MASAHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
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ELECTRICITY
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a magnetoresistive memory which can reduce power consumption and a magnetoresistive memory writing method. SOLUTION: When writing data in a memory cell array 110, a comparator circuit 150 compares the data stored in a word line in which data is written with the writing data stored in an I/O buffer 140 for each bit and generates a matching determination signal; a current control section 160 generates a current control signal which controls writing current based on the matching determination signal generated by the comparator circuit 150; and a memory cell array 110 controls writing current based on the current control signal generated by the current control section 160. COPYRIGHT: (C)2006,JPO&NCIPI