VACANCY-DOMINATED SILICON WAFER AND INGOT HAVING LOW DEFECT DENSITY

PROBLEM TO BE SOLVED: To provide a single crystal silicon in an ingot or wafer form, which contains an axially symmetric region in which vacancies are predominant intrinsic point defects and which is substantially free of agglomerated vacancy intrinsic point defects. SOLUTION: The single crystal sil...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MUTTI PAOLO, MCQUAID SEAMUS A, MARKGRAF STEVE A, JOHNSON BAYARD K, FALSTER ROBERT, JOSEPH C HOLZER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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