VACANCY-DOMINATED SILICON WAFER AND INGOT HAVING LOW DEFECT DENSITY

VACANCY-DOMINATED SILICON WAFER AND INGOT HAVING LOW DEFECT DENSITY

PROBLEM TO BE SOLVED: To provide a single crystal silicon in an ingot or wafer form, which contains an axially symmetric region in which vacancies are predominant intrinsic point defects and which is substantially free of agglomerated vacancy intrinsic point defects. SOLUTION: The single crystal sil...

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Bibliographische Detailangaben
Hauptverfasser: MUTTI PAOLO, MCQUAID SEAMUS A, MARKGRAF STEVE A, JOHNSON BAYARD K, FALSTER ROBERT, JOSEPH C HOLZER
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a single crystal silicon in an ingot or wafer form, which contains an axially symmetric region in which vacancies are predominant intrinsic point defects and which is substantially free of agglomerated vacancy intrinsic point defects. SOLUTION: The single crystal silicon wafer includes: a center axis; front and back faces approximately perpendicular to the center axis; a circumferential edge; and a radius extending from the center axis to the circumferential edge. The wafer comprises a 1st axially symmetric region in which vacancies are the predominant intrinsic point defects and which is substantially free of agglomerated vacancy intrinsic point defects. The 1st axially symmetric region includes the center axis or has a width of at least about 15 mm. COPYRIGHT: (C)2006,JPO&NCIPI