LOW-TEMPERATURE MOCVD PROCESSING FOR MANUFACTURING PrxCa1-xMnO3 THIN FILM

PROBLEM TO BE SOLVED: To provide a method of manufacturing a resistive random access memory device having a PCMO switching thin film. SOLUTION: The system comprises a process (No.12) that prepares a PCMO precursor, a process (No.14) that prepares a substrate, a process (No.16) that mounts the substr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LI TINGKAI, LAWRENCE J CHARNESKI, ZHUANG WEI-WEI, HSU SHENG TENG, EVANS DAVID R
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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