LOW-TEMPERATURE MOCVD PROCESSING FOR MANUFACTURING PrxCa1-xMnO3 THIN FILM

PROBLEM TO BE SOLVED: To provide a method of manufacturing a resistive random access memory device having a PCMO switching thin film. SOLUTION: The system comprises a process (No.12) that prepares a PCMO precursor, a process (No.14) that prepares a substrate, a process (No.16) that mounts the substrate in an MOCVD reactor a process (No.18) that deposits the PCMO thin film on the substrate by introducing the PCMO precursor into the MOCVD reactor, and has a process (No.20) that maintains the MOCVD vaporizer at the temperature range of 240 to 280°C, and the MOCVD reactor at the temperature scope of 300 to 400°C, a process (No.24) that takes the substrate deposited with the thin film out of the MOCVD reactor, and a process (No.26) that completes the resistive random access memory device. COPYRIGHT: (C)2006,JPO&NCIPI