SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which accelerates a CMOS transistor by raising the carrier mobility by the stress of a sidewall, and to provide a method of manufacturing the same. SOLUTION: First sidewalls 16a, 16b each having a tensile stress are formed on the side faces of the gate electrode 14a of an NMIS transistor and the gate electrode 14b of a PMIS transistor. Then, a compression stress-containing insulating film 17 having a compression stress is formed on the whole surface of a substrate. Then, a resist 18 is used as a mask, the compression stress-containing insulating film 17 is selectively etched, and a second sidewall 17a is formed on the side face of the gate electrode 14b. Then, a resist 19 coating the second sidewall 17a is used as a mask, and the compression stress-containing insulating film 17 is removed. Then, an interlayer insulating film 21 in which stress does not substantially occur is formed on the whole surface of a semiconductor substrate 11. COPYRIGHT: (C)2006,JPO&NCIPI