SURFACE TREATMENT METHOD FOR OXIDE SUBSTRATE

SURFACE TREATMENT METHOD FOR OXIDE SUBSTRATE

PROBLEM TO BE SOLVED: To provide an optimum surface treatment method for a single-crystal substrate composed of REScO3(RE represents at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Y). SOLUTION: The single-crystal substrate composed of DyScO3is prepared, and the prepared single-crystal su...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: KARIMOTO SHINICHI
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide an optimum surface treatment method for a single-crystal substrate composed of REScO3(RE represents at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Y). SOLUTION: The single-crystal substrate composed of DyScO3is prepared, and the prepared single-crystal substrate is heated in air or an atmosphere, in which an oxygen gas is made to flow, at 800 to 1,300°C. The time for heat treatment may be 1 to 100 hr. The heat-treated DyScO3single-crystal substrate is dipped in a nitric-acid solution using methanol as a solvent, and brought to an etching-treated state. COPYRIGHT: (C)2006,JPO&NCIPI