Al-Si FILM, AND METHOD FOR DEPOSITING THE SAME

PROBLEM TO BE SOLVED: To provide an Al-Si film in which a silicon phase is finely dispersed in an aluminum based matrix, and a method for depositing the same. SOLUTION: The Al-Si film containing aluminum and silicon has a matrix of aluminum or an aluminum alloy and silicon particles of the grain siz...

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Bibliographische Detailangaben
Hauptverfasser:	YUMOTO ATSUSHI, SHIODA KAZUMICHI, YAMAMOTO TAKEHISA, HIROKI FUJIO, NIWA NAOKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an Al-Si film in which a silicon phase is finely dispersed in an aluminum based matrix, and a method for depositing the same. SOLUTION: The Al-Si film containing aluminum and silicon has a matrix of aluminum or an aluminum alloy and silicon particles of the grain size of several to 100 nm dispersed in the matrix. Silicon particles and aluminum particles generated by using plasma or heating are injected in a vacuum chamber (a film deposition chamber 30) in the air flow of the ultrasonic-free jet, and physical-vapor-deposited on a substrate 33 arranged in the vacuum chamber. COPYRIGHT: (C)2006,JPO&NCIPI