OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To properly consolidate a fast and high light acceptance sensitivity photo-diode (PD) and a fast and highly pressure-proof transistor on the same semiconductor substrate. SOLUTION: In an opto-electronic integrated circuit (OEIC) wherein a transistor and a light receiving element are consolidated on the same semiconductor substrate, a p-type first epitaxial layer 22 is formed, and then, an n-type second epitaxial layer 23 is formed, the structure of which makes it possible to materialize an epitaxial layer's film thickness most suitable for a higher performance of a vertical PNP transistor 3 and a photo-diode 4, and thus, such a structure is feasible as can fully exercise each element's characteristics improvement, thus resulting in an enhancement of the OEIC's characteristics. COPYRIGHT: (C)2006,JPO&NCIPI