METHOD FOR REDUCING EFFECTS OF STRAY LIGHT IN OPTICAL LITHOGRAPHY, DEVICES OBTAINED THEREOF AND MASKS USED THEREWITH

PROBLEM TO BE SOLVED: To provide a method for reducing the influence of the spread of a transmitted light on a feature size, during optical lithography. SOLUTION: The method comprises at least two irradiation steps. During a first irradiation step, a resist is exposed with an original mask (100), i....

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Bibliographische Detailangaben
Hauptverfasser:	LEUNISSEN PETER, KIM YOUNGANG
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for reducing the influence of the spread of a transmitted light on a feature size, during optical lithography. SOLUTION: The method comprises at least two irradiation steps. During a first irradiation step, a resist is exposed with an original mask (100), i.e. comprising substantially a pattern to be obtained in a layer. Thereafter, without developing the exposed resist (140), an irradiation step with at least one exposure is performed whereby the resist (140) is exposed with a second mask, which is at least partly the inverse of the original mask (100). The exposures of the second irradiation step are compared and then defocused as the first irradiation step. COPYRIGHT: (C)2006,JPO&NCIPI