METHOD FOR FORMING POSITIONING MARK AND WIRING PATTERN PROVIDED ON SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method for forming a positioning mark and an interconnection pattern forming a fine interconnection pattern to form the positioning mark, which are easily recongnized at a step of exposure, and also to provide a method for manufacturing a semiconductor device using...
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| creator | SHIMIZU TADAYOSHI |
| description | PROBLEM TO BE SOLVED: To provide a method for forming a positioning mark and an interconnection pattern forming a fine interconnection pattern to form the positioning mark, which are easily recongnized at a step of exposure, and also to provide a method for manufacturing a semiconductor device using it and a semiconductor device. SOLUTION: The method for forming the positioning mark 112 comprises steps of: flattening the surface of an insulating layer 105; forming a masking film 106 on the insulating layer 105; forming a first and a second pattern 107, 108 by etching a part of the masking film 106 and the insulating layer 105; forming a metallic film 109 covering the insulating layer 105 and the masking film 106; forming a third pattern 110 and a first interconnection pattern 111 by removing a portion of the metallic film 109; and protruding a portion of the third pattern 110 from the main surface of the insulating layer 105. COPYRIGHT: (C)2006,JPO&NCIPI |
| format | Patent |
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SOLUTION: The method for forming the positioning mark 112 comprises steps of: flattening the surface of an insulating layer 105; forming a masking film 106 on the insulating layer 105; forming a first and a second pattern 107, 108 by etching a part of the masking film 106 and the insulating layer 105; forming a metallic film 109 covering the insulating layer 105 and the masking film 106; forming a third pattern 110 and a first interconnection pattern 111 by removing a portion of the metallic film 109; and protruding a portion of the third pattern 110 from the main surface of the insulating layer 105. 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SOLUTION: The method for forming the positioning mark 112 comprises steps of: flattening the surface of an insulating layer 105; forming a masking film 106 on the insulating layer 105; forming a first and a second pattern 107, 108 by etching a part of the masking film 106 and the insulating layer 105; forming a metallic film 109 covering the insulating layer 105 and the masking film 106; forming a third pattern 110 and a first interconnection pattern 111 by removing a portion of the metallic film 109; and protruding a portion of the third pattern 110 from the main surface of the insulating layer 105. 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SOLUTION: The method for forming the positioning mark 112 comprises steps of: flattening the surface of an insulating layer 105; forming a masking film 106 on the insulating layer 105; forming a first and a second pattern 107, 108 by etching a part of the masking film 106 and the insulating layer 105; forming a metallic film 109 covering the insulating layer 105 and the masking film 106; forming a third pattern 110 and a first interconnection pattern 111 by removing a portion of the metallic film 109; and protruding a portion of the third pattern 110 from the main surface of the insulating layer 105. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | METHOD FOR FORMING POSITIONING MARK AND WIRING PATTERN PROVIDED ON SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
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