MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE

MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE

PROBLEM TO BE SOLVED: To form a homo-epitaxial growth layer with a small surface defect density on a silicon carbide substrate with a low off-angle. SOLUTION: This manufacturing method comprises the steps of machining the ä0001} plane of silicon carbide, etching the surface of the silicon carbide by...

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Bibliographische Detailangaben
Hauptverfasser: KIMOTO TSUNENOBU, NAKAMURA SHUNICHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To form a homo-epitaxial growth layer with a small surface defect density on a silicon carbide substrate with a low off-angle. SOLUTION: This manufacturing method comprises the steps of machining the ä0001} plane of silicon carbide, etching the surface of the silicon carbide by plasma of a material containing at least a halogen after the machining step, and exposing the surface of the silicon carbide to a plasma of a material not containing a halogen and containing at least oxygen after the etching step. COPYRIGHT: (C)2006,JPO&NCIPI