MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT ON CONDUCTIVE SUBSTRATE UTILIZING METALLIC CONNECTION

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor element on a conductive substrate lowering the operating voltage of the element and utilizing a vertical conductivity type metallic connection lengthening the use-life of the element. SOLUTION: The n-type or p-type conductiv...

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Bibliographische Detailangaben
Hauptverfasser:	CHIU AN-PING, TENG SHUN-DA, CHANG PEN-HSIU, SHIH CHUAN-FENG, CHEN NAIUAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor element on a conductive substrate lowering the operating voltage of the element and utilizing a vertical conductivity type metallic connection lengthening the use-life of the element. SOLUTION: The n-type or p-type conductive substrate is selected, and at least one layer or more of buffer layers are formed on the substrate. A first conductive layer as an n-type or p-type nitride is formed on the buffer layer, and the conductive layer and the substrate are connected by a metallic ohmic contact. COPYRIGHT: (C)2006,JPO&NCIPI