FILM-FORMING METHOD, INORGANIC FILM, ELECTRONIC PARTS AND ELECTRONIC EQUIPMENT

PROBLEM TO BE SOLVED: To provide a film-forming method for forming an inorganic film superior in characteristics; the inorganic film formed thereby; and electronic parts and electronic equipment provided with the inorganic film. SOLUTION: The film-forming method for forming the inorganic film 8 on a...

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Bibliographische Detailangaben
Hauptverfasser: MIYAGAWA TAKUYA, SOGO TOMOHIKO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a film-forming method for forming an inorganic film superior in characteristics; the inorganic film formed thereby; and electronic parts and electronic equipment provided with the inorganic film. SOLUTION: The film-forming method for forming the inorganic film 8 on a substrate 5 with a chemical vapor phase deposition method, while using a compound composed of a film material 81' which is a component of the inorganic film 8, and of a part other than the film material, as the precursor 80 of the film material, comprises the steps of: supplying the precursor 80 in a gas form or a mist form onto the substrate 5, in the state of making the substrate 5 face to a receiving part 7 which accommodates the precursor 80 therein, through a space; heating the precursor 81 of the gas form or the mist form in the space to thermally decompose at least one part thereof, and to decompose and remove the part other than the film material, before the precursor 81 arrives at the substrate 5; and delivering the film material 81' onto the substrate to make the inorganic film 8 formed thereon. COPYRIGHT: (C)2006,JPO&NCIPI