PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To enhance the contrast of a resist and to improve pattern accuracy, in a pattern forming method, using excimer laser light that has a wavelength of ≤200 nm for the exposure light. SOLUTION: A photofading compound is used as an additive in a resist comprising a fluorine-contain...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	OTOGURO AKIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To enhance the contrast of a resist and to improve pattern accuracy, in a pattern forming method, using excimer laser light that has a wavelength of ≤200 nm for the exposure light. SOLUTION: A photofading compound is used as an additive in a resist comprising a fluorine-containing resin. A diazo compound is suitable for use as the photofading compound. In this method, the resist to which the photofading compound has been added is applied on a substrate to be processed, and the resist is irradiated with the excimer laser light and exposed, and developed, in accordance with normal procedure to form a resist pattern. A chemically amplified resist can be used as the resist. COPYRIGHT: (C)2006,JPO&NCIPI