THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, AND PLATE INDICATOR INCLUDING THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a thin film transistor having a double buffer structure and a method of manufacturing the thin film transistor, and a plate indicator including the thin film transistor and a method of manufacturing the plate indicator. SOLUTION: There are provided the thin film tran...

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Bibliographische Detailangaben
Hauptverfasser: KANG TAE-WOOK, JEONG CHANG-YONG, OH JAE-YOUNG, SEO SEONG-MOH, KIM CHANG-SU, PARK SANG IL
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a thin film transistor having a double buffer structure and a method of manufacturing the thin film transistor, and a plate indicator including the thin film transistor and a method of manufacturing the plate indicator. SOLUTION: There are provided the thin film transistor including: a primary buffer layer formed of an amorphous silicon film located on a substrate; a secondary buffer layer located on the primary buffer layer; a semiconductor layer located on the secondary buffer layer; and a gate electrode located on the semiconductor layer, and the method of manufacturing the thin film transistor. Moreover, there are provided the plate indicator including the thin film transistor and the method of manufacturing the plate indicator. COPYRIGHT: (C)2006,JPO&NCIPI