ELECTRON BEAM APPLICATION DEVICE AND ELECTRON BEAM LITHOGRAPHY APPARATUS

PROBLEM TO BE SOLVED: To eliminate the problem that requests for a dimensional accuracy and a positional accuracy become severe in association with microminiaturization in an electron beam lithography apparatus, to satisfy this, an increased precision of a regulating method becomes a big subject, bu...

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Bibliographische Detailangaben
Hauptverfasser: OTA HIROYA, HAYATA YASUNARI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To eliminate the problem that requests for a dimensional accuracy and a positional accuracy become severe in association with microminiaturization in an electron beam lithography apparatus, to satisfy this, an increased precision of a regulating method becomes a big subject, but there is a limit in resolution and a contrast in a conventional transparent instrumenting method. SOLUTION: The electron beam application device includes a scatterer having at least two layers of apertures, a throttle at the downstream of the scatterer, and an electron beam detector at the downstream of the throttle. In the electron beam application device, the size of two surfaces of the apertures is changed. The atomic number of the main constituting atom of the film of the surface having the large aperture is made larger than the atomic number of the main constituting atom of the film of the small surface of the aperture. Thus, the resolution and the contrast are made compatible. COPYRIGHT: (C)2006,JPO&NCIPI