FILM THICKNESS MEASURING METHOD AND FILM THICKNESS MEASURING INSTRUMENT

PROBLEM TO BE SOLVED: To measure a film thickness in complicated structure such as film thickness on a gate of a transistor, after CMP (Chemical Mechanical Polishing). SOLUTION: When measuring the film thickness on the gate of the transistor, an optical model is prepared to constitute a measuring ob...

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Bibliographische Detailangaben
Hauptverfasser: HIROSE TAKESHI, NOMOTO MINEO, SAITOU KEIYA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To measure a film thickness in complicated structure such as film thickness on a gate of a transistor, after CMP (Chemical Mechanical Polishing). SOLUTION: When measuring the film thickness on the gate of the transistor, an optical model is prepared to constitute a measuring object by the composition of respective different film structures of a gate area, an active area and an element separation area, and the surface film thickness on the gate is calculated by fitting. When calculating the film thickness, the film thickness is measured highly precisely by fitting optical constants of a polycrystal Si, a metal siliside and the like constituting the gate, at the same time. COPYRIGHT: (C)2006,JPO&NCIPI