SUPPORT FOR HEAT TREATMENT OF SEMICONDUCTOR WAFER

SUPPORT FOR HEAT TREATMENT OF SEMICONDUCTOR WAFER

PROBLEM TO BE SOLVED: To provide a support for heat treatment of a semiconductor wafer ensuring high temperature heat treatment while eliminating slip due to thermal deformation of the support. SOLUTION: The support for heat treatment of a semiconductor wafer comprises a thin plate of silicon and ha...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIMOMURA KOTA, SASAKI TOSHIMI, NAGAHATA YUKIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a support for heat treatment of a semiconductor wafer ensuring high temperature heat treatment while eliminating slip due to thermal deformation of the support. SOLUTION: The support for heat treatment of a semiconductor wafer comprises a thin plate of silicon and has a silicon island formed on the contact surface with the semiconductor wafer wherein the silicon island has a width of 50-1,000 μm and a depth of 10-50 μm. COPYRIGHT: (C)2006,JPO&NCIPI