MEMORY DEVICE CAPACITOR AND MANUFACTURING METHOD THEREFOR

MEMORY DEVICE CAPACITOR AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a memory device capacitor which allows realization of a high integration semiconductor memory device, having proper fatigue characteristics, and to provide a manufacturing method therefor. SOLUTION: A memory device capacitor, including a transistor structure, compris...

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Bibliographische Detailangaben
Hauptverfasser: PARK YOUNG-SOO, RI SHOKEN, CHO CHOONG-RAE, KIM SUK-PIL, GU SHUNMO, SHIN SANG-MIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a memory device capacitor which allows realization of a high integration semiconductor memory device, having proper fatigue characteristics, and to provide a manufacturing method therefor. SOLUTION: A memory device capacitor, including a transistor structure, comprises a lower electrode 40, which is formed above an impurity region 22b of the transistor structure and includes a metal electrode 36 and a metal oxide electrode 35; a ferroelectric layer 37, which is formed so that it surrounds the lower electrode 40; and an upper electrode 38 formed on the ferroelectric layer 37. COPYRIGHT: (C)2006,JPO&NCIPI