METHOD FOR MANUFACTURING RUTHENIUM FILM OR RUTHENIUM OXIDE FILM

PROBLEM TO BE SOLVED: To provide a method for manufacturing a ruthenium film or a ruthenium oxide film in which excellent adhesiveness is demonstrated to a base material, no impurities are mixed, and the ruthenium film can be deposited in a relatively short time. SOLUTION: In the ruthenium film manu...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	DUSSARAT CHRISTIAN, GATINEAU JULIEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for manufacturing a ruthenium film or a ruthenium oxide film in which excellent adhesiveness is demonstrated to a base material, no impurities are mixed, and the ruthenium film can be deposited in a relatively short time. SOLUTION: In the ruthenium film manufacturing method, volatile inorganic ruthenium compound in a gas phase state and reducing agent in a gas phase state are introduced into a reaction chamber (11) in which at least one substrate is stored, the volatile inorganic ruthenium compound and the reducing agent are reacted with each other, and ruthenium is deposited on at least one substrate. COPYRIGHT: (C)2006,JPO&NCIPI