CVD RAW MATERIAL, VAPORIZATION FEED METHOD, AND FILM DEPOSITION METHOD

PROBLEM TO BE SOLVED: To provide a CVD raw material for depositing a transparent conductive film having high quality and high purity such as a ZnAlO film, a ZnMgO film, a MgAlO film, a ZnO film, and a MgO film on a surface of various substrates by the CVD method, and to provide a vaporization feed m...

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Hauptverfasser: TAKAMATSU YUKICHI, IWATA MITSUHIRO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a CVD raw material for depositing a transparent conductive film having high quality and high purity such as a ZnAlO film, a ZnMgO film, a MgAlO film, a ZnO film, and a MgO film on a surface of various substrates by the CVD method, and to provide a vaporization feed method, and a film deposition method using the CVD raw material. SOLUTION: The CVD raw material is obtained by dissolving metallic compound selected from alkoxyde compound, β-diketone-based compound, carboxylate compound, halogen compound, alkyl compound, and cyclopendadienyl compound of the metal to be selected from zinc, aluminum, and magnesium in hydrocarbon or alcohol. The raw material is fed to a vaporizer by a liquid flow rate controller, and vaporized, and fed to a semi-conductor manufacturing apparatus to deposit a transparent conductive film on the surface of a substrate. COPYRIGHT: (C)2006,JPO&NCIPI