MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting device capable of forming end surface window structure by Zn solid phase diffusion which can be performed in low temperature and short time, furthermore is independent of thickness. SOLUTION: The manufacturing method of the semiconductor light emitting device comprises a process of selectively depositing a ZnO film 13b in a portion with respect to a location adjacent to a resonator end surface of a layered product having at least a first and a second conductive type cladding layers in such a manner that they sandwich active layers 6, and a process of forming a window structure 15 by performing a thermal diffusion treatment in a diffusion temperature of 600°C or less and 450°C or more, and a diffusion time of 20 minute or less and 3 minute or more, furthermore by diffusing Zn of the above-mentioned ZnO film 13b inside the above-mentioned layered product in solid phase diffusion. COPYRIGHT: (C)2006,JPO&NCIPI